International Journal of Engineering Research in Electrical and Electronic Engineering(IJEREEE)

Monthly Journal for Electrical and Electronic Engineering

International Journal of Engineering Research in Electrical and Electronic Engineering

Volume3 ,October 2016.

Volume3,October 2016,

Topic : A Comprehensive Survey on MEMS Technology in RF as Road Map towards Future Research

Authors:Prof. Raju Yanamshetti || Sandeep Kumar Kulkarni

Abstract:Since 1980 there have been significant research with MEMS switch in the field of RF (Radio Frequency). In every 3-5 years there have been a break through achieved with MEMS in RF technology. This breakthrough include improvement in the switching voltage, improvement in the overall pass-band, improvement at the insertion loss and improvement at the switching speed. Currently MEMS switch offers a tremendously high frequency around 70GHz in comparison to FET which offers 4GHz, similarly diode offers 20GHz, EMR 5GHz, EMRSMA 40GHz . Even though insertion loss is now reduced to 0.25db, switching voltage has come down to 2 to 4 V, there are areas where MEMS still need significant amount of research in terms of unit cost MEMS switches are significantly high value in comparison to other peers, have present lesser less life time and represent high switching power (even though switching power comedown. A dedicated research is needed in the direction of MEMS based RF technology to improve this factor were they lag other semiconductor counterpart. This research requires and understanding of technological advancement in the area of MEMS along with the parameter and factor that have resulted changes and advancement. In this paper we present historical water fall in the advancement of MEMS over RF technology along with comprehensive analysis with the other parallel technology in terms of standard matrices and theoretical foundations..

Keywords: RF MEMS, Insertion Loss, Switching Voltage, and Pass-band Frequency.

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DOI: 01.1617/vol2iss10pid158


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Editor-in-Chief

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Editor-in-Chief
Dr.Krzysztof Chwastek
Associate Professor,
Czestochowa University of Technology, Polland.


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IMPACT FACTOR: 3.784

ISSN(Online): 2395-2717

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Thomson Reuters ID : q-6288-2016.
ORCiD Research ID : 0000-0001-9540-6799

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Journal Code : IJEREEE
Electronic ISSN : 2395-2717
Impact Factor : 3.784
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