Open Access Journal

ISSN : 2394-2320 (Online)

International Journal of Engineering Research in Computer Science and Engineering (IJERCSE)

Monthly Journal for Computer Science and Engineering

Open Access Journal

International Journal of Engineering Research in Electrical and Electronic Engineering(IJEREEE)

Monthly Journal for Electrical and Electronic Engineering

ISSN : 2395-2717 (Online)

Call For Paper : Vol. 9, Issue 5 2022
Design of Schmitt-Trigger-Based Low Power 12T SRAM cell

Author : Darshan R S 1 S L Gangadharaiah 2

Date of Publication :14th August 2017

Abstract: As the technology is being scaled down leakage power is becoming an important contributing factor in total power dissipation of the circuit. So in the portable electronic devices such as cell phones, laptops emphasis has to be given to reduce power consumption during active as well as standby mode. This paper presents a Schmitt-triggerbased 12T SRAM cell which consumes lowest average power as well as lowest leakage power among the cells considered for comparison. The results have been obtained using Cadence Virtuoso Tool with 180nm Technology. The layout is drawn in 180nm technology to layout versus schematic for the proposed 12T SRAM cell

Reference :

    1. Sayeed ahmad, Mohit kumar gupta, Naushad alam, and Mohd. Hasan, “Single- Ended SchmittTrigger-Based Robust Low-Power SRAM Cell” IEEE Transactions on VLSI Systems, 2016.
    2. J. P. Kulkarni and K. Roy, “Ultralow-voltage process-variation-tolerant Schmitt-trigger-based SRAM design,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 20, no. 2, pp. 319–332, Feb. 2012.
    3. J. P. Kulkarni, K. Kim, and K. Roy, “A 160 mV robust Schmitt trigger based subthreshold SRAM,” IEEE J. Solid-State Circuits, vol. 42, no. 10, pp. 2303–2313, Oct. 2007.
    4. Deepak Aggarwal , Praveen kaushik ,and Narender Gujran ,“A Comparative Study of 6T, 8T and 9T Sram Cell”, International Journal of Latest Trends in Engineering and Technology, Vol. 1Issue 2, 2012.
    5. Aminul Islam and Mohd.Hassan, “Variability Analysis of 6T and 7T SRAM cell in sub-45nm technology”, IIUM Engineering Journal, Vol. 12, p.13-30, 2011.

Recent Article