Open Access Journal

ISSN : 2394-2320 (Online)

International Journal of Engineering Research in Computer Science and Engineering (IJERCSE)

Monthly Journal for Computer Science and Engineering

Open Access Journal

International Journal of Engineering Research in Electrical and Electronic Engineering(IJEREEE)

Monthly Journal for Electrical and Electronic Engineering

ISSN : 2395-2717 (Online)

A Comprehensive Survey on MEMS Technology in RF as Road Map towards Future Research

Author : Prof. Raju Yanamshetti 1 Sandeep Kumar Kulkarni 2

Date of Publication :7th October 2016

Abstract: Since 1980 there have been significant research with MEMS switch in the field of RF (Radio Frequency). In every 3-5 years there have been a break through achieved with MEMS in RF technology. This breakthrough include improvement in the switching voltage, improvement in the overall pass-band, improvement at the insertion loss and improvement at the switching speed. Currently MEMS switch offers a tremendously high frequency around 70GHz in comparison to FET which offers 4GHz, similarly diode offers 20GHz, EMR 5GHz, EMRSMA 40GHz . Even though insertion loss is now reduced to 0.25db, switching voltage has come down to 2 to 4 V, there are areas where MEMS still need significant amount of research in terms of unit cost MEMS switches are significantly high value in comparison to other peers, have present lesser less life time and represent high switching power (even though switching power comedown. A dedicated research is needed in the direction of MEMS based RF technology to improve this factor were they lag other semiconductor counterpart. This research requires and understanding of technological advancement in the area of MEMS along with the parameter and factor that have resulted changes and advancement. In this paper we present historical water fall in the advancement of MEMS over RF technology along with comprehensive analysis with the other parallel technology in terms of standard matrices and theoretical foundations.

Reference :

    1. charles L . Goldsmith, Susan Eshelman ,”performances of low –loss RF MEMS capacitive switches,”IEEE Microwave and guided wave letters, Vol.8,No.8,PP.269-271 August 1998.
    2. shyh –chiang shen , Milton feng , “Low actuation voltage RF MEMS switches with signal frequencies from 0.25Hz to 40GHz,” University of Illinois at urbana-champaign,IL 61801-2355- IEEE,1999.
    3. JaeY Park, geunH Kim, Ki W Chung , Jong U Bu, “ Electroplated RF MEMS capacitive switches,”LG corporate institute of Technology, 16 woomyeon-dong seoul,korea, IEEE 2000.
    4. Md.N Mollah, NemaiC Karmakar, “RF MEMS switches: Paradigms of microwave switching,”Nanyang Technological University, signapore,Proceedings of APMC 2001
    5. Linda P.B Katehi,James F Harvey,Elliott Brown, “MEMS and Si micromachined circuits for High frequency applications,” IEEE transactions on microwave theory and techniques, vol 50, No.3,March 2002.
    6. Dimitrios peroulis, Sergio P Pacheco, Kamal sarbanandi, Linda p B Katehi, “Electromechanical considerations in developing low voltage RF MEMS Switches,” IEEE transactions on microwave theory and techniques, vol 51, No.1,January 2003

Recent Article